View DCR820SG65_4152607.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DCR470G85
Phase Control Thyristor Preliminary Information
DS5894-1.1 August 2007 (LN25569)
FEATURES
Double Side Cooling High Surge Capability
KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt 8500V 467A 5250A 1500V/s 200A/us
APPLICATIONS
High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS
Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V 8500 8000 7000 Conditions
* Higher dV/dt selections available
DCR470G85 DCR470G80 DCR470G70
Tvj = -40 to 125 C C, IDRM = IRRM = 100mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively
Outline type code: G (See Package Details for further information)
Lower voltage grades available.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR470G85
Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order.
1/10
www.dynexsemi.com
DCR470G85
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60 unless stated otherwise C
Symbol Double Side Cooled IT(AV) IT(RMS) IT
Parameter
Test Conditions
Max.
Units
Mean on-state current RMS value Continuous (direct) on-state current
Half wave resistive load -
467 734 725
A A A
SURGE RATINGS
Symbol ITSM It
2
Parameter Surge (non-repetitive) on-state current I t for fusing
2
Test Conditions 10ms half sine, Tcase = 125 C VR = 0
Max. 5.25 0.138
Units kA MA s
2
THERMAL AND MECHANICAL RATINGS
Symbol Rth(j-c) Parameter Thermal resistance - junction to case Test Conditions Double side cooled Single side cooled DC Anode DC Cathode DC Rth(c-h) Thermal resistance - case to heatsink Clamping force 11.5kN (with mounting compound) Tvj Virtual junction temperature On-state (conducting) Reverse (blocking) Tstg Fm Storage temperature range Clamping force Double side Single side Min. -55 10 Max. 0.0268 0.0527 0.0652 0.0072 .0144 135 125 125 13 Units C/W C/W C/W C/W C/W C C C kN
2/10
www.dynexsemi.com
DCR470G85
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol IRRM/IDRM dV/dt dI/dt
Parameter Peak reverse and off-state current Max. linear rate of rise of off-state voltage Rate of rise of on-state current
Test Conditions At VRRM/VDRM, Tcase = 125 C To 67% VDRM, Tj = 125 gate open C, From 67% VDRM to 2x IT(AV) Gate source 30V, 10 , tr < 0.5s, Tj = 125 C
Repetitive 50Hz Non-repetitive
Min. -
Max. 100 1500 100 200
Units mA V/s A/s A/s
VT(TO)
Threshold voltage - Low level Threshold voltage - High level
50A to 400A at Tcase = 125 C 400A to 1600A at Tcase = 125 C 50A to 400A at Tcase = 125 C 400A to 1600A at Tcase = 125 C VD = 67% VDRM, gate source 30V, 10 tr = 0.5s, Tj = 25 C
TBD
1.162 1.3063 3.153 2.763 TBD
V V m m s
rT
On-state slope resistance - Low level On-state slope resistance - High level
tgd
Delay time
tq
Turn-off time
Tj = 125 VR = 200V, dI/dt = 5A/s, C, dVDR/dt = 20V/s linear
1000
1600
s
QS IL IH
Stored charge Latching current Holding current
IT = 500A, Tj = 125 dI/dt = 5A/s, C, Tj = 25 VD = 5V C, Tj = 25 RG-K = , ITM = 500A, IT = 5A C,
2000 -
2600 3 300
C A mA
3/10
www.dynexsemi.com
DCR470G85
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT VGD IGT IGD
Parameter Gate trigger voltage Gate non-trigger voltage Gate trigger current Gate non-trigger current
Test Conditions VDRM = 5V, Tcase = 25 C At VDRM, Tcase = 125 C VDRM = 5V, Tcase = 25 C VDRM = 5V, Tcase = 25 C
Max. 1.5 TBD 250 TBD
Units V V mA mA
CURVES
1600
Instantaneous on-state current IT - (A)
25 min C 25 max C
1200
125 min C 125 max C
800
400
0 1.0 2.0 3.0 4.0 5.0
Instantaneous on-state voltage VT - (V)
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION VTM = A + Bln (IT) + C.IT+D. IT
Where
A = 1.545561 B = -0.202735 C = 0.001865 D = 0.066158
these values are valid for Tj = 125 for IT 50A to 1600A C
4/10
www.dynexsemi.com
DCR470G85
SEMICONDUCTOR
16 15 14
130 120 Maximum case temperature, T case ( o C ) 110 100 90 80 70 60 50 40 30 20 10 0 500 1000 1500 0 0 100 200 300 400 500 600 Mean on-state current, IT(AV) - (A) 700 180 120 90 60 30
Mean power dissipation - (kW)
13 12 11 10 9 8 7 6 5 4 3 2 1 0 180 120 90 60 30
Mean on-state current, IT(AV) - (A)
Fig.3 On-state power dissipation - sine wave
Fig.4 Maximum permissible case temperature, double side cooled - sine wave
130 Maximum heatsink temperature, THeatsink - ( C) 120 110 100 90 80 70 60 50 40 30 20 10 0 0 100 200 300 400 500 600 700 180 120 90 60 30
12 11
Mean power dissipation - (kW)
10 9 8 7 6 5 4 3 2 1 0 0 500 1000 1500 2000 d.c. 180 120 90 60 30
Mean on-state current, IT(AV) - (A)
Mean on-state current, IT(AV) - (A)
Fig.5 Maximum permissible heatsink temperature, double side cooled - sine wave
Fig.6 On-state power dissipation - rectangular wave
5/10
www.dynexsemi.com
DCR470G85
SEMICONDUCTOR
130 Maximum permissible case temperature , Tcase -( C) Maximum heatsink temperature Theatsink -(o C) 120 110 100 90 80 70 60 50 40 30 20 10 0 0 200 400 600 800 1000 1200 d.c. 180 120 90 60 30
130 120 110 100 90 80 70 60 50 40 30 20 10 0 0 200 400 600 800 1000 d.c. 180 120 90 60 30
Mean on-state current, IT(AV) - (A)
Mean on-state current, IT(AV) - (A)
Fig.7 Maximum permissible case temperature, double side cooled - rectangular wave
Fig.8 Maximum permissible heatsink temperature, double side cooled - rectangular wave
1 2.2995 0.0066401 2.3214 0.0066948 2.4895 0.0070404
[1]
Double side cooled
Ri ( C/kW) Ti (s) Ri ( C/kW) Ti (s) Ri ( C/kW) Ti (s)
2 5.4226 0.0457025 5.2661 0.045528 5.9105 0.052895
3 16.9074 0.4962482 10.2686 0.3484209 7.4256 0.3933903
4 2.1488 1.8248 34.8031 4.582 49.3432 4.2295
70 Double Side Cooled
Anode side cooled Cathode side cooled
Themal impedance Z th(j-c) ( C/kW )
60 50 40
Anode Cooled Cathode Cooled
Zth = A [Ri x ( 1-exp. (t/ti))]
ARth(j-c) Conduction
30 20 10 0 0.001
Tables show the increments of thermal resistance R th(j-c) when the device operates at conduction angles other than d.c.
0.01
0.1
1
10
100
Time ( s )
A 180 120 90 60 30 15
Double side cooling AZth (z) sine. 4.15 4.90 5.74 6.53 7.16 7.46 rect. 2.72 4.02 4.79 5.65 6.64 7.18
A 180 120 90 60 30 15
Anode Side Cooling AZth (z) sine. 4.15 4.89 5.73 6.52 7.15 7.44 rect. 2.72 4.02 4.78 5.65 6.62 7.16
A 180 120 90 60 30 15
Cathode Sided Cooling AZth (z) sine. 4.13 4.87 5.69 6.46 7.07 7.36 rect. 2.71 4.00 4.76 5.60 6.56 7.09
Fig.9 Maximum (limit) transient thermal impedance - junction to case ( C/kW)
6/10
www.dynexsemi.com
DCR470G85
SEMICONDUCTOR
13
6 Conditions: Tcase = 125 C VR =0 Pulse width = 10ms
12 11
Surge current, ITSM- (kA)
Surge current, ITSM - (kA)
5
10 9 8 7 6 5 4 3 2 1 0
Conditions: Tcase= 125 C VR = 0 half-sine w ave
0.3 0.25 0.2
4
ITSM I2t
3
0.15 0.1 0.05 0 100
2
1
0 1 10 100
1
10
Number of cycles
Pulse width, tP - (ms)
Fig.10 Multi-cycle surge current
Fig.11 Single-cycle surge current
2 I2t (MA s)
7/10
www.dynexsemi.com
DCR470G85
SEMICONDUCTOR
10 9
Pulse Width us 100 200 500 1000 10000 Pulse Power PGM (Watts) Frequency Hz 50 100 150 150 150 150 150 150 150 100 20 -
Gate trigger voltage, VGT - (V)
8 7 6 5 4 3 2 1 0 0
400 150 125 100 25 -
Upper Limit
Preferred gate drive area
Tj = 125 C
o
Tj = 25oC
Tj = -40oC
Lower Limit
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Gate trigger current IGT, - (A)
Fig12 Gate Characteristics
30
Lower Limit Upper Limit 5W 10W 20W 50W 100W 150W -40C
25
Gate trigger voltage, VGT - (V)
20
15
10
5
0 0 1 2 3 4 5 6 7 8 9 10
Gate trigger current, IGT - (A)
Fig. 13 Gate characteristics
8/10
www.dynexsemi.com
DCR470G85
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
3rd ANGLE PROJECTION
DO NOT SCALE
IF IN DOUBT ASK
HOLE O3.60 X 2.00 DEEP (IN BOTH ELECTRODES)
20 OFFSET (NOM.) TO GATE TUBE
Device DCR803SG18 DCR806SG28 DCR818SG48 DCR820SG65 DCR1080G22 DCR960G28 DCR780G42 DCR690G52 DCR590G65 DCR470G85
Maximum Minimum Thickness Thickness (mm) (mm) 26.415 25.865 26.49 25.94 26.84 26.17 27.1 26.55 26.415 25.865 26.49 25.94 26.72 26.17 26.84 26.29 27.1 26.55 27.46 26.91
O57.0 MAX CATHODE O33.95 NOM
GATE ANODE O33.95 NOM FOR PACKAGE HEIGHT SEE TABLE
O1.5
Clamping force: 11.5 kN 10% Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: G
Fig.14 Package outline
9/10
www.dynexsemi.com
DCR470G85
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
10/10
www.dynexsemi.com

▲Up To Search▲

Price & Availability of DCR820SG65

	To Download DCR820SG65 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .